{"id":17167,"date":"2011-05-25T11:09:06","date_gmt":"2011-05-25T08:09:06","guid":{"rendered":"http:\/\/www.fyysika.ee\/uudised\/?p=17167"},"modified":"2011-05-25T13:03:31","modified_gmt":"2011-05-25T10:03:31","slug":"intel-hakkab-kasutama-3d-transistore-%e2%80%99%e2%80%99tri-gate%e2%80%99%e2%80%99","status":"publish","type":"post","link":"https:\/\/www.fyysika.ee\/?p=17167","title":{"rendered":"Intel hakkab kasutama 3D transistore \u2019\u2019Tri-Gate\u2019\u2019"},"content":{"rendered":"<p>4. mail 2011. aastal teatas Intel, et on teinud l\u00e4bimurde transistoride arengus. Esimest korda ajaloos, peale SiO2 kasutuselev\u00f5ttu 50 aastat tagasi asendatakse t\u00f6\u00f6stusliinil tasapinnalise kanaliga transistorid kolmedimensionaalsetega.<\/p>\n<div id=\"attachment_17174\" style=\"width: 310px\" class=\"wp-caption alignright\"><br \/>\n<img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-17174\" class=\"size-medium wp-image-17174\" title=\"2D_3D_trasistor\" src=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2011\/05\/2D_3D_trasistor-300x125.jpg\" alt=\"\" width=\"300\" height=\"125\" srcset=\"https:\/\/www.fyysika.ee\/wp-content\/uploads\/2011\/05\/2D_3D_trasistor-300x125.jpg 300w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2011\/05\/2D_3D_trasistor-1024x428.jpg 1024w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2011\/05\/2D_3D_trasistor-250x104.jpg 250w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2011\/05\/2D_3D_trasistor.jpg 1076w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><p id=\"caption-attachment-17174\" class=\"wp-caption-text\">Joonis 1. Vasakul 2D planaarne transistor ja paremal 3D \u201eTri-Gate\u201c transistor kus pais \u00fcmbritseb kolmest k\u00fcljest vertikaalset kanalit, v\u00f5imaldades kanali \u2019\u2019t\u00e4ielikku t\u00fchjenemist\u2019\u2019 laengukandjatest ja transistori efektiivsemat \u00fcmberl\u00fclitamist (http:\/\/download.intel.com\/newsroom\/kits\/22nm\/pdfs\/22nm-Details_Presentation.pdf) <\/p><\/div>\n<p>Uut disainitud 3D transistori nimetas Intel \u201eTri-Gate\u201c ehk kolme paisuga transistoriks.<\/p>\n<p>Uus  22-nm noodiga Inteli protsessor tuleb m\u00fc\u00fcki  nimetuse all \u201eIvy Bridge\u201c. Vaata ka Inteli videot: http:\/\/www.engadget.com\/2011\/05\/04\/intel-will-mass-produce-22nm-3d-transistors-for-all-future-cpus\/<\/p>\n<p>3 m\u00f5\u00f5tmeline (3D) \u201eTri gate\u201c transistor erineb fundamentaalselt siiani kasutusel olnud kahe m\u00f5\u00f5tmelisest s.t planaarsest transistorist (Joonis 1).<\/p>\n<p>22 nm 3D\u201cTri-Gate\u201c transistor lubab 37% suuremat j\u00f5udlust madalatel pingetel, v\u00f5rreldes 32 nm 2D planaarse transistoriga. See muudab transistori \u00fcmberl\u00fclitamise v\u00e4hem energiakulukaks &#8211; uus transistor  kulutab ainult poole sellest energiast mida kulutab 32 nm mikroprotsessoris olev transistor (Joonis 2).<\/p>\n<div class=\"mceTemp\">\n<dl id=\"attachment_17182\" class=\"wp-caption alignleft\" style=\"width: 310px;\"><a href=\"http:\/\/&lt;\/a&gt;www.engadget.com\/2011\/05\/04\/intel-will-mass-produce-22nm-3d-transistors-for-all-future-cpus\/\"><\/a><\/p>\n<dt class=\"wp-caption-dt\"><a href=\"http:\/\/&lt;\/a&gt;www.engadget.com\/2011\/05\/04\/intel-will-mass-produce-22nm-3d-transistors-for-all-future-cpus\/\"><\/a><a href=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2011\/05\/Delay_3Dtransistor1.jpg\"><img loading=\"lazy\" decoding=\"async\" class=\"size-medium wp-image-17182\" title=\"Delay_3Dtransistor\" src=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2011\/05\/Delay_3Dtransistor1-300x150.jpg\" alt=\"\" width=\"300\" height=\"150\" srcset=\"https:\/\/www.fyysika.ee\/wp-content\/uploads\/2011\/05\/Delay_3Dtransistor1-300x150.jpg 300w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2011\/05\/Delay_3Dtransistor1-250x125.jpg 250w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2011\/05\/Delay_3Dtransistor1.jpg 936w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><\/dt>\n<dd class=\"wp-caption-dd\">Joonis 2. Signaali viivised 2D ja 3D transistoride kanalites operatsioonipinge funktsioonidena (http:\/\/download.intel.com\/newsroom\/kits\/22nm\/pdfs\/22nm-Details_Presentation.pdf).<\/dd>\n<\/dl>\n<\/div>\n<p>Inteli 3D \u201eTri Gate\u201c suudab madalamatel pingetel t\u00f6\u00f6tada v\u00e4iksemate lekkevooludega, mis t\u00e4hendab enneolematut energia kokkuhoidu. Signaali ajaline viivis kanalis (<em>Gate Delay<\/em>) on seejuures v\u00e4iksem (Joonis 2).<\/p>\n<p>Allikas:<\/p>\n<p>Posted by <a href=\"http:\/\/newsroom.intel.com\/people\/IntelPR\">IntelPR<\/a> on May 4, 2011 10:05:29 AM<\/p>\n<p><a href=\"http:\/\/newsroom.intel.com\/community\/intel_newsroom\/blog\/2011\/05\/04\/intel-reinvents-transistors-using-new-3-d-structure\">http:\/\/newsroom.intel.com\/community\/intel_newsroom\/blog\/2011\/05\/04\/intel-reinvents-transistors-using-new-3-d-structure<\/a><\/p>\n<p>vaata ka: <a href=\"http:\/\/newsroom.intel.com\/docs\/DOC-2032\">http:\/\/newsroom.intel.com\/docs\/DOC-2032<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>4. mail 2011. aastal teatas Intel, et on teinud l\u00e4bimurde transistoride arengus. Esimest korda ajaloos, peale SiO2 kasutuselev\u00f5ttu 50 aastat tagasi asendatakse t\u00f6\u00f6stusliinil tasapinnalise kanaliga transistorid kolmedimensionaalsetega. Uut disainitud 3D transistori nimetas Intel \u201eTri-Gate\u201c ehk kolme paisuga transistoriks. Uus 22-nm noodiga Inteli protsessor tuleb m\u00fc\u00fcki nimetuse all \u201eIvy Bridge\u201c. Vaata ka Inteli videot: http:\/\/www.engadget.com\/2011\/05\/04\/intel-will-mass-produce-22nm-3d-transistors-for-all-future-cpus\/ 3 [&hellip;]<\/p>\n","protected":false},"author":27,"featured_media":17185,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[31,16],"tags":[],"class_list":{"0":"post-17167","1":"post","2":"type-post","3":"status-publish","4":"format-standard","5":"has-post-thumbnail","7":"category-rakenduslik-teadus","8":"category-teadusuudis","9":"entry"},"_links":{"self":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts\/17167","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/users\/27"}],"replies":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=17167"}],"version-history":[{"count":0,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts\/17167\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/media\/17185"}],"wp:attachment":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=17167"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=17167"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=17167"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}