{"id":24765,"date":"2012-01-29T21:44:41","date_gmt":"2012-01-29T18:44:41","guid":{"rendered":"http:\/\/www.fyysika.ee\/uudised\/?p=24765"},"modified":"2012-01-29T22:07:39","modified_gmt":"2012-01-29T19:07:39","slug":"ibm-i-teadlased-valmistasid-susinik-nanotorudest-9-nanomeetrise-labimooduga-transistori","status":"publish","type":"post","link":"https:\/\/www.fyysika.ee\/?p=24765","title":{"rendered":"IBM-i teadlased valmistasid s\u00fcsinik nanotorudest 9 nanomeetrise l\u00e4bim\u00f5\u00f5duga transistori"},"content":{"rendered":"<p><strong>Antud uudis ei r\u00e4\u00e4gi k\u00fcll v\u00e4ikseima olemasoleva transistori loomisest, kuid IBM-i teadlased valmistasid senini v\u00e4ikseima s\u00fcsinik nanotorudest koosneva transistori. Oma \u00fcheksa nanomeetrise l\u00e4bim\u00f5\u00f5duga on see v\u00e4iksem kui r\u00e4nitransistorite seni arvatud v\u00f5imalik v\u00e4ikseim f\u00fc\u00fcsiline piir. \u00a0Lisaks tarbib antud seade v\u00e4hem energiat ning kannab rohkem laengut kui olemasolev tehnoloogia. <\/strong><\/p>\n<div id=\"attachment_24766\" style=\"width: 310px\" class=\"wp-caption alignleft\"><a href=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2012\/01\/sub-10-nm-carbon-nanotube-transistor-nano-letters-acs-publications.jpg\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-24766\" class=\"size-medium wp-image-24766   \" title=\"sub-10-nm-carbon-nanotube-transistor---nano-letters-acs-publications\" src=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2012\/01\/sub-10-nm-carbon-nanotube-transistor-nano-letters-acs-publications-300x151.jpg\" alt=\"\" width=\"300\" height=\"151\" srcset=\"https:\/\/www.fyysika.ee\/wp-content\/uploads\/2012\/01\/sub-10-nm-carbon-nanotube-transistor-nano-letters-acs-publications-300x151.jpg 300w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2012\/01\/sub-10-nm-carbon-nanotube-transistor-nano-letters-acs-publications-250x126.jpg 250w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2012\/01\/sub-10-nm-carbon-nanotube-transistor-nano-letters-acs-publications.jpg 505w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><p id=\"caption-attachment-24766\" class=\"wp-caption-text\">Joonisel on kujutatud l\u00e4bivelektronmikroskoobi pilt transistori pealt vaatest ja l\u00e4bil\u00f5ikest, n\u00e4idatud on ka transistori kanali pikkus mis on 9nm. Parempoolsel graafikul on kujutatud neeluvoolu s\u00f5ltuvus paisu ja l\u00e4tte vahele rakendatud pingest.<\/p><\/div>\n<p>Kuigi s\u00fcsinik nanotorudest valmistatud transistore on juba aastaid r\u00e4nip\u00f5hise tehnoloogiaga v\u00f5rreldud, on sellekohaseid teoreetilisi uurimusi ning eksperimente v\u00e4hem kui 10 nanomeetrise l\u00e4bim\u00f5\u00f5duga seadmete kohta v\u00e4he.<\/p>\n<p>IBM-i teadlased asetasid uue transistori valmistamiseks nanotorud \u00f5hukesele isolaatorkihile ning kasutasid kaheastmelist protsessi, et selle sisse kontaktid asetada. Asjal on siiski ka oma konks: puhaste pooljuhist nanotorude suuremas koguses valmistamine on keeruline, nagu seda on ka nende asetamine viisil, mis v\u00f5imaldab transistoril t\u00f6\u00f6data. Seet\u00f5ttu l\u00e4heb enne aega, kui antud tehnoloogia Inteli 3D r\u00e4niga v\u00f5istlema saab hakata, kuid see on siiski samm l\u00e4hemal s\u00fcsinikup\u00f5histe arvutiteni.<\/p>\n<p><a href=\"http:\/\/www.engadget.com\/2012\/01\/28\/ibm-builds-9-nanometer-carbon-nanotube-transistor-puts-silicon\/\">Allikas<\/a><\/p>\n<p>Teadusartikkel: &#8220;<a href=\"http:\/\/pubs.acs.org\/doi\/abs\/10.1021\/nl203701g\">Sub-10 nm Carbon Nanotube Transistor<\/a>&#8220;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Antud uudis ei r\u00e4\u00e4gi k\u00fcll v\u00e4ikseima olemasoleva transistori loomisest, kuid IBM-i teadlased valmistasid senini v\u00e4ikseima s\u00fcsinik nanotorudest koosneva transistori. Oma \u00fcheksa nanomeetrise l\u00e4bim\u00f5\u00f5duga on see v\u00e4iksem kui r\u00e4nitransistorite seni arvatud v\u00f5imalik v\u00e4ikseim f\u00fc\u00fcsiline piir. \u00a0Lisaks tarbib antud seade v\u00e4hem energiat ning kannab rohkem laengut kui olemasolev tehnoloogia. Kuigi s\u00fcsinik nanotorudest valmistatud transistore on juba aastaid [&hellip;]<\/p>\n","protected":false},"author":32,"featured_media":24766,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[31,16],"tags":[147],"class_list":{"0":"post-24765","1":"post","2":"type-post","3":"status-publish","4":"format-standard","5":"has-post-thumbnail","7":"category-rakenduslik-teadus","8":"category-teadusuudis","9":"tag-nanotehnoloogia","10":"entry"},"_links":{"self":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts\/24765","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/users\/32"}],"replies":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=24765"}],"version-history":[{"count":0,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts\/24765\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/media\/24766"}],"wp:attachment":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=24765"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=24765"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=24765"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}