{"id":3248,"date":"2010-06-04T18:17:06","date_gmt":"2010-06-04T15:17:06","guid":{"rendered":"http:\/\/www.fyysika.ee\/uudised\/?p=3248"},"modified":"2010-06-25T14:57:26","modified_gmt":"2010-06-25T11:57:26","slug":"lisandiga-grafeen","status":"publish","type":"post","link":"https:\/\/www.fyysika.ee\/?p=3248","title":{"rendered":"Lisandiga grafeen"},"content":{"rendered":"<p><strong>Hiljuti avastatud r\u00e4nip\u00f5histe elektroonikaseadmete valmistamisel kasulik orgaaniline molekul v\u00f5ib olla kasutatav ka grafeenip\u00f5histe seadmete v\u00e4ljat\u00f6\u00f6tamisel. Max Plancki Metalliuuringute Instituudi teadlaste vastavasisuline artikkel ilmus<\/strong> <strong><em>Physical Review B<\/em><\/strong>\u00a0<strong>1. juuni v\u00e4ljaandes.<\/strong><\/p>\n<p>\u00dcli\u00f5hukest s\u00fcsinikukihti, tuntud ka kui grafeeni, saaks tulevikus kasutada suure hulga v\u00e4ikesem\u00f5\u00f5tmeliste ja efektiivsete elektroonikaseadmete valmistamisel. Kuid kasuliku komponendi valmistamiseks tuleb r\u00e4ni v\u00f5i grafeeni elektrilisi omadusi kontrolli all hoida, see on v\u00f5imalik t\u00e4nu kindlatele lisanditele.<\/p>\n<div id=\"attachment_3252\" style=\"width: 310px\" class=\"wp-caption alignright\"><a href=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2010\/06\/dopinggraphe.jpg\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-3252\" class=\"size-medium wp-image-3252\" title=\"dopinggraphe\" src=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2010\/06\/dopinggraphe-300x273.jpg\" alt=\"\" width=\"300\" height=\"273\" srcset=\"https:\/\/www.fyysika.ee\/wp-content\/uploads\/2010\/06\/dopinggraphe-300x273.jpg 300w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2010\/06\/dopinggraphe.jpg 400w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><p id=\"caption-attachment-3252\" class=\"wp-caption-text\">Lisandkemikaalid kinnituvad grafeenlehele, modifitseerides selle elektrilisi omadusi \u00fcliv\u00e4ikeste ja kiirete elektroonikaseadmete valmistamiseks. Pilt: American Physical Society<\/p><\/div>\n<p>Tavap\u00e4raselt lisatakse r\u00e4nip\u00f5histele seadmetele erinevaid lisandaatomeid v\u00f5i -molekule, pannes need r\u00e4nikristalli aatomite asemele. Grafeenis aga pannakse lisandid s\u00fcsinikukihi peale ilma, et oleks vajadus s\u00fcsiniku aatomeid eemaldada. Grafeeni lisandina on kasutatud erineva edukusega n\u00e4iteks kulla, vismuti v\u00f5i l\u00e4mmastikdioksiidi molekule.<\/p>\n<p>Max Plancki Instituudi teadlased aga avastasid, et keemiline \u00fchend F4-TCNQ(tetrafluoro-tetrats\u00fcanokinoonmetaan), mis siiani on osutunud efektiivseks LEDide tootmisel r\u00e4nialusele, n\u00e4ib sobivat ka grafeeni lisandiks. F4-TCNQ-st moodustuvad grafeenile stabiilsed kihid, mis suurele valgushulgale v\u00f5i soojusele eksponeeritult j\u00e4\u00e4b v\u00f5rdlemisi robustseks. Samuti kontrollib see grafeeni elektrilisi omadusi viisil, mis viitab, et see on lisandina hea valik.<\/p>\n<p><a href=\"http:\/\/www.physorg.com\/news194613118.html\">Allikas<\/a><\/p>\n<p>Teadusartikkel &#8220;<a href=\"http:\/\/www.citeulike.org\/user\/leonhardmayrhofer\/article\/7234836\">Charge neutrality and band-gap tuning of epitaxial graphene on SiC by molecular doping<\/a>&#8220;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Hiljuti avastatud r\u00e4nip\u00f5histe elektroonikaseadmete valmistamisel kasulik orgaaniline molekul v\u00f5ib olla kasutatav ka grafeenip\u00f5histe seadmete v\u00e4ljat\u00f6\u00f6tamisel. Max Plancki Metalliuuringute Instituudi teadlaste vastavasisuline artikkel ilmus Physical Review B\u00a01. juuni v\u00e4ljaandes. \u00dcli\u00f5hukest s\u00fcsinikukihti, tuntud ka kui grafeeni, saaks tulevikus kasutada suure hulga v\u00e4ikesem\u00f5\u00f5tmeliste ja efektiivsete elektroonikaseadmete valmistamisel. Kuid kasuliku komponendi valmistamiseks tuleb r\u00e4ni v\u00f5i grafeeni elektrilisi omadusi kontrolli [&hellip;]<\/p>\n","protected":false},"author":32,"featured_media":0,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[31,16],"tags":[45],"class_list":{"0":"post-3248","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-rakenduslik-teadus","7":"category-teadusuudis","8":"tag-grafeengrafaan","9":"entry","10":"has-post-thumbnail"},"_links":{"self":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts\/3248","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/users\/32"}],"replies":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=3248"}],"version-history":[{"count":0,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts\/3248\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=3248"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=3248"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=3248"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}