{"id":9898,"date":"2010-10-27T18:57:40","date_gmt":"2010-10-27T15:57:40","guid":{"rendered":"http:\/\/www.fyysika.ee\/uudised\/?p=9898"},"modified":"2010-10-27T20:27:56","modified_gmt":"2010-10-27T17:27:56","slug":"vee-abil-grafeen-nanoelektroonika-rakendusteni","status":"publish","type":"post","link":"https:\/\/www.fyysika.ee\/?p=9898","title":{"rendered":"Vee abil grafeen-nanoelektroonika rakendusteni"},"content":{"rendered":"<p><strong>Teadlased Rensselaeri Pol\u00fctehnilisest Instituudist t\u00f6\u00f6tasid v\u00e4lja uue meetodi kontrollimaks grafeeni keelutsooni laiust vee abil, avades seega uusi uksi grafeenip\u00f5histele transistoritele ning muudele nanoelektroonika seadmetele.<\/strong><\/p>\n<p>Asetades grafeenkile niiskuse k\u00e4tte, tekitasid Rensslaeri professor <strong>Nikhil Koratkar<\/strong> koos kaasteadlastega grafeenis keelutsooni &#8211; omaduse, mis on grafeentransistorite valmistamisel \u00fclimalt t\u00e4htis, kirjutab <a href=\"http:\/\/www.physorg.com\/news\/2010-10-graphene-nanoelectronics.html\">physorg.com<\/a>.<\/p>\n<div id=\"attachment_9899\" style=\"width: 310px\" class=\"wp-caption alignright\"><a href=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2010\/10\/watercouldho.jpg\"><img loading=\"lazy\" decoding=\"async\" aria-describedby=\"caption-attachment-9899\" class=\"size-medium wp-image-9899\" title=\"watercouldho\" src=\"http:\/\/www.fyysika.ee\/uudised\/wp-content\/uploads\/2010\/10\/watercouldho-300x223.jpg\" alt=\"\" width=\"300\" height=\"223\" srcset=\"https:\/\/www.fyysika.ee\/wp-content\/uploads\/2010\/10\/watercouldho-300x223.jpg 300w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2010\/10\/watercouldho-250x186.jpg 250w, https:\/\/www.fyysika.ee\/wp-content\/uploads\/2010\/10\/watercouldho.jpg 400w\" sizes=\"auto, (max-width: 300px) 100vw, 300px\" \/><\/a><p id=\"caption-attachment-9899\" class=\"wp-caption-text\">Pildil testitakse elektriliselt r\u00e4nioksiidi substraadil asuvat grafeenkile neljaotsalise sondi abil. Pilt: Rensselaer\/Koratkar<\/p><\/div>\n<p>Koratkari t\u00fc\u00fcr\u00fchm demonstreeris keelutsooni tekitamist grafeenis muutes vee hulka, mis materjali \u00fchte k\u00fclge <a href=\"http:\/\/en.wikipedia.org\/wiki\/Adsorption\">adsorbeerus<\/a>. Niimoodi \u00f5nnestus neil tekitada keelutsoone vahemikus nullist kuni 0,2 elektronvoldini. Efekt oli t\u00e4ies ulatuses \u00fcmberp\u00f6\u00f6ratav ning vaakumi all kahanes keelutsoon tagasi nullini. Meetod ei sisalda endas keerulisi grafeeni valmistamise v\u00f5i modifitseerimise protsesse, kuid vajab kinnist keskkonda, kus niiskus on kindla kontrolli all.<\/p>\n<p>,,Selles uurimuses me demonstreerisime, et grafeenile saab keelutsooni tekitada ka v\u00f5rdlemisi lihtsate meetoditega. See avab uksi grafeeni kasutamisele transistorite uues p\u00f5lvkonnas, dioodides, nanoelektroonikas, nanofotoonikas ning muudes rakendustes,&#8221; s\u00f5nas Koratkar.<\/p>\n<p>P\u00f5hjus, miks grafeenil keelutsoon puudub, tuleneb tema v\u00f5relisest struktuurist. Koratkar otsustas kasutada \u00e4ra ideed, kus struktuuri s\u00fcmmeetria rikutakse \u00e4ra sidustades molekule vaid grafeenkile \u00fchele k\u00fcljele. Selle tegemiseks valmistas ta r\u00e4ni ning r\u00e4nioksiidi pinnale grafeeni ning asetas selle kambrisse, milles niiskustaset h\u00e4sti kontrollida sai. Kambris adsorbeerusid vee molekulid materjali vees olevasse k\u00fclge. Selguski, et t\u00e4nud rikutud s\u00fcmmeetriale tekkis grafeenis keelutsoon. Efektile aitas kaasa ka r\u00e4nioksiid-substraadi defektidega interakteeruv niiskus.<\/p>\n<p>,,Varem on n\u00e4idatud, kuidas tekitada keelutsooni adsorbeerides materjali pinnale gaase, kuid see on esimene kord, kui seda on tehtud vee abil,&#8221; selgitas Koratkar. ,,Vee adsorbeerumise eeliseks v\u00f5rreldes gaasidega on fakt, et see on odav, mittem\u00fcrgine ning kiiprakendustes palju kergemini kontrollitav.&#8221;<\/p>\n<p><a href=\"http:\/\/www.physorg.com\/news\/2010-10-graphene-nanoelectronics.html\">Allikas<\/a><\/p>\n<p>Teadusartikkel &#8220;<a href=\"http:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/smll.201001384\/abstract;jsessionid=0DDD0CFF00F93A415C7F2AAAB42D663A.d03t02?systemMessage=Due+to+scheduled+maintenance+access+to+the+Wiley+Online+Library+may+be+disrupted+as+follows:+Saturday,+30+October+-+New+York+0700+EDT+to+0900+EDT;+London+1200+BST+to+1400+BST;+Singapore+1900+SGT+to+2100+SGT.\">Tunable Band gap in Graphene by the Controlled Adsorbtion of Water Molecules<\/a>&#8220;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Teadlased Rensselaeri Pol\u00fctehnilisest Instituudist t\u00f6\u00f6tasid v\u00e4lja uue meetodi kontrollimaks grafeeni keelutsooni laiust vee abil, avades seega uusi uksi grafeenip\u00f5histele transistoritele ning muudele nanoelektroonika seadmetele. Asetades grafeenkile niiskuse k\u00e4tte, tekitasid Rensslaeri professor Nikhil Koratkar koos kaasteadlastega grafeenis keelutsooni &#8211; omaduse, mis on grafeentransistorite valmistamisel \u00fclimalt t\u00e4htis, kirjutab physorg.com. Koratkari t\u00fc\u00fcr\u00fchm demonstreeris keelutsooni tekitamist grafeenis muutes vee [&hellip;]<\/p>\n","protected":false},"author":32,"featured_media":0,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_genesis_hide_title":false,"_genesis_hide_breadcrumbs":false,"_genesis_hide_singular_image":false,"_genesis_hide_footer_widgets":false,"_genesis_custom_body_class":"","_genesis_custom_post_class":"","_genesis_layout":"","footnotes":""},"categories":[31,16],"tags":[],"class_list":{"0":"post-9898","1":"post","2":"type-post","3":"status-publish","4":"format-standard","6":"category-rakenduslik-teadus","7":"category-teadusuudis","8":"entry","9":"has-post-thumbnail"},"_links":{"self":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts\/9898","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/users\/32"}],"replies":[{"embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=9898"}],"version-history":[{"count":0,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=\/wp\/v2\/posts\/9898\/revisions"}],"wp:attachment":[{"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=9898"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Fcategories&post=9898"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.fyysika.ee\/index.php?rest_route=%2Fwp%2Fv2%2Ftags&post=9898"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}