Author(s): A. Lim, W. M. C. Foulkes, A. P. Horsfield, D. R. Mason, A. Schleife, E. W. Draeger, and A. A. Correa
Ab initio simulations of electronic excitations produced when a semiconductor experiences a large perturbation show a new regime in electron-ion energy exchange whereby a defect state carries electrons across the band gap.
[Phys. Rev. Lett. 116, 043201] Published Wed Jan 27, 2016