Author(s): Philipp Leubner, Lukas Lunczer, Christoph Brüne, Hartmut Buhmann, and Laurens W. Molenkamp
The band gap of HgTe quantum wells can be controlled by adjusting their strain via a substrate lattice mismatch. The achieved band gap of 55 meV is well above room temperature thermal energy, which may allow for technical applications of these 2D topological insulators.
[Phys. Rev. Lett. 117, 086403] Published Fri Aug 19, 2016