Author(s): Jianfeng Bao, Wataru Norimatsu, Hiroshi Iwata, Keita Matsuda, Takahiro Ito, and Michiko Kusunoki
The addition of a rapid-cooling step to the epitaxial growth of graphene on silicon carbide can yield higher-quality graphene sheets.
[Phys. Rev. Lett. 117, 205501] Published Tue Nov 08, 2016