Linear Magnetoresistance Caused by Mobility Fluctuations in n-Doped Cd_{3}As_{2}

Author(s): A. Narayanan, M. D. Watson, S. F. Blake, N. Bruyant, L. Drigo, Y. L. Chen, D. Prabhakaran, B. Yan, C. Felser, T. Kong, P. C. Canfield, and A. I. Coldea

Conductance variations, and not Fermi surface changes, may be the cause of linear magnetoresistance in the candidate 3D Dirac semimetal Cd₃As₂.

[Phys. Rev. Lett. 114, 117201] Published Thu Mar 19, 2015